GT40T301 2002-01-18 1 toshiba insulated gate bipolar transistor silicon n channel igbt GT40T301 parallel resonance inverter switching applications frd included between emitter and collector enhancement-mode high speed igbt : t f = 0.25 s (typ.) (i c = 40 a) frd : t rr = 0.7 s (typ.) (di/dt = ? 20 a/s) low saturation voltage: v ce (sat) = 3.7 v (typ.) (i c = 40 a) maximum ratings (ta 25c) characteristics symbol rating unit collector-emitter voltage v ces 1500 v gate-emitter voltage v ges 25 v dc i c 40 collector current 1 ms i cp 80 a dc i ecf 30 emitter-collector forward current 1 ms i ecpf 80 a collector power dissipation (tc 25c) p c 200 w junction temperature t j 150 c storage temperature range t stg 55~150 c equivalent circuit unit: mm jedec D jeita D toshiba 2-21f2c weight: 9.75 g (typ.) collector gate emitter
GT40T301 2002-01-18 2 electrical characteristics (ta 25c) characteristics symbol test condition min typ. max unit gate leakage current i ges v ge 25 v, v ce 0 500 na collector cut-off current i ces v ce 1500 v, v ge 0 1.0 ma gate-emitter cut-off voltage v ge (off) i c 40 ma, v ce 5 v 4.0 7.0 v collector-emitter saturation voltage v ce (sat) i c 40 a, v ge 15 v 3.7 5.0 v input capacitance c ies v ce 10 v, v ge 0, f 1 mhz 2900 pf rise time t r 0.40 turn-on time t on 0.45 fall time t f 0.23 0.40 switching time turn-off time t off 0.6 s emitter-collector forward voltage v ecf i ecf 30 a, v ge 0 1.9 2.5 v reverse recovery time t rr i ecf 30 a, v ge 0, di/dt 20 a/ s 0.7 3.0 s igbt 0.625 thermal resistance r th (j-c) diode 1.25 c/w 15 v 15 v 0 600 v 15 51
GT40T301 2002-01-18 3 collector current i c (a) collector-emitter voltage v ce (v) collector-emitter voltage v ce (v) i c ? v ce collector current i c (a) gate-emitter voltage v ge (v) v ce ? v ge collector-emitter voltage v ce (v) gate-emitter voltage v ge (v) v ce ? v ge collector-emitter voltage v ce (v) gate-emitter voltage v ge (v) v ce ? v ge gate-emitter voltage v ge (v) i c ? v ge case temperature tc (c) v ce (sat) ? tc collector-emitter saturation voltage v ce (sat) (v) 10 8 6 4 2 0 0 4 8 12 16 20 80 common emitter tc 40c i c 10 a 60 40 20 10 8 6 4 2 0 0 4 8 12 16 20 20 common emitter tc 25c i c 10 a 40 60 80 10 8 6 4 2 0 0 4 8 12 16 20 20 common emitter tc 125c i c 10 a 40 60 80 100 80 60 40 20 0 0 4 8 12 16 20 25 common emitter v ce 5 v tc 125c 40 6 0 80 40 0 40 120 160 80 2 4 8 10 i c 10 a common emitter v ge 15 v 20 40 60 80 100 80 60 40 20 0 0 2 4 6 8 10 v ge 8 v 10 12 15 20 25
GT40T301 2002-01-18 4 0 0 80 160 240 10 20 30 common emitter r l 7.5 tc 25c v ce 100 v 200 300 40 120 200 280 0.1 1 0.3 0.5 1 3 5 10 3 5 10 30 50 100 300 500 1000 common emitter v cc 600 v i c 40 a v gg 15 v tc 25c t f t r t of f t on collector current i c (a) capacitance c (pf) gate charge q g (nc) v ce , v ge ? q g collector-emitter voltage v ce ( 10 v) gate-emitter voltage v ge (v) gate resistance r g ( ) switching time ? r g switching time ( s) collector current i c (a) switching time ? i c switching time ( s) collector-emitter voltage v ce (v) c ? v ce collector-emitter voltage v ce (v) safe operating area collector-emitter voltage v ce (v) reverse bias soa collector current i c (a) 0.01 0 10 20 30 40 50 0.03 0.05 0.1 0.3 0.5 1 3 5 10 common emitter v cc 600 v r g 51 v gg 15 v tc 25c t of f t r t f t on 1 1 3 100 10000 5 10 30 50 3 5 10 30 50 100 300 500 1000 3000 5000 c ies c oes c res common emitter v ge 0 v f 1 mhz tc 25c 0.3 3 0.5 1 10 30 100 300 1000 3000 1 3 5 10 30 50 100 300 * : single nonrepetitive pulse tc 25c curves must be derated linearly with increase in temperature. dc operation i c max (pulsed) * i c max (continuous) 10 ms * 1 ms * 100 s * 10 s * 3 10 30 100 300 1000 3000 10 30 100 200 t j 125c v ge 15 v r g 51
GT40T301 2002-01-18 5 reverse recovery time t rr ( s) reverse recovery time t rr ( s) emitter-collector forward current i ecf (a) i rr , t rr ? i ecf di/dt (a/ s) i rr , t rr ? di/dt 2.5 2.0 1.5 1.0 0.5 0 100 80 60 40 20 0 0 40 80 120 160 240 200 common collector i ecf 30 a tc 25c i r r t r r 1.0 0.8 0.6 0.4 0.2 0 peak reverse recovery current i rr (a) peak reverse recovery current i rr (a) 20 16 12 8 4 0 0 20 40 60 80 100 common collector di/dt 20 a/ s tc 25c i r r t r r 10 3 10 5 10 4 10 3 10 2 10 1 10 0 10 1 10 2 10 2 10 1 10 1 10 0 tc 25c diode igbt pulse width t w (s) r th (t) ? t w transient thermal impedance r th (t) (c/w) emitter-collector forward voltage v ecf (v) i ecf ? v ecf emitter-collector forward current i ecf (a) 100 80 60 40 20 0 0 1 2 3 4 5 common collector tc 40c 25 125
GT40T301 2002-01-18 6 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707ea a restrictions on product use
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